BSP126/S911115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
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Технічний опис BSP126/S911115 NXP USA Inc.
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 375mA, Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SC-73, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V.