Технічний опис BSP19AT1G On Semiconductor
Description: TRANS NPN 350V 0.1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Frequency - Transition: 70MHz, Supplier Device Package: SOT-223 (TO-261), Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 800 mW.
Інші пропозиції BSP19AT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BSP19AT1G | Виробник : ON Semiconductor |
 Trans GP BJT NPN 350V 0.1A 800mW Automotive 4-Pin(3+Tab) SOT-223 T/R |
товару немає в наявності |
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BSP19AT1G | Виробник : onsemi |
Description: TRANS NPN 350V 0.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 70MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW |
товару немає в наявності |
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BSP19AT1G | Виробник : onsemi |
Description: TRANS NPN 350V 0.1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 70MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW |
товару немає в наявності |