BSP250,135 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.34 грн |
| 10+ | 41.06 грн |
| 100+ | 26.83 грн |
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Технічний опис BSP250,135 Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 1.65W (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції BSP250,135
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
BSP250,135 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 3A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 1.65W (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
 |
BSP250,135 | Nexperia |
MOSFETs BSP250/SOT223/SC-73 |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
| BSP250,135 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.65W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.65W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BSP250,135 |
|
Виробник: Nexperia
MOSFETs BSP250/SOT223/SC-73
MOSFETs BSP250/SOT223/SC-73
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.