Технічний опис BSP254A,126 NXP Semiconductors
Description: MOSFET P-CH 250V 200MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V.
Інші пропозиції BSP254A,126
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BSP254A,126 | Виробник : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-92-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V |
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