Технічний опис BSP298H6327XUSA1 Infineon Technologies
Description: MOSFET N-CH 400V 500MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-SOT223-4, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BSP298H6327XUSA1
| Фото | Назва | Виробник | Інформація |
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Ціна |
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BSP298H6327XUSA1 | Виробник : INFINEON |
 Description: INFINEON - BSP298H6327XUSA1 - Leistungs-MOSFET, n-Kanal, 400 V, 500 mA, 2.2 ohm, SOT-223, OberflächenmontageSVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
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BSP298H6327XUSA1 | Виробник : INFINEON |
Description: INFINEON - BSP298H6327XUSA1 - Leistungs-MOSFET, n-Kanal, 400 V, 500 mA, 2.2 ohm, SOT-223, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 400 Dauer-Drainstrom Id: 500 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 1.8 Bauform - Transistor: SOT-223 Anzahl der Pins: 4 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 2.2 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 3 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
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BSP298H6327XUSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 400V 500MA SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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BSP298H6327XUSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 400V 500MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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BSP298H6327XUSA1 | Виробник : Infineon Technologies |
MOSFETs N-Ch 400V 500mA SOT-223-3 |
товару немає в наявності |