BSP299H6327XUSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 400MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Технічний опис BSP299H6327XUSA1 Infineon Technologies
Description: MOSFET N-CH 500V 400MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції BSP299H6327XUSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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BSP299H6327XUSA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 400MA SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BSP299H6327XUSA1 | Infineon Technologies |
MOSFETs N-Ch 500V 400mA SOT-223-3 |
товару немає в наявності |
В кошику од. на суму грн. |
| BSP299H6327XUSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 400MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 400MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BSP299H6327XUSA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 500V 400mA SOT-223-3
MOSFETs N-Ch 500V 400mA SOT-223-3
товару немає в наявності
В кошику
од. на суму грн.