Технічний опис BSP315 INF
Description: MOSFET P-CH 50V 1A SOT223, Drain to Source Voltage (Vdss): 50 V, Supplier Device Package: SOT-223, Power Dissipation (Max): 1.8W, Current - Continuous Drain (Id) @ 25°C: 1A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.
Інші пропозиції BSP315
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BSP315 | Siemens |
 Description: MOSFET P-CH 50V 1A SOT223Drain to Source Voltage (Vdss): 50 V Supplier Device Package: SOT-223 Power Dissipation (Max): 1.8W Current - Continuous Drain (Id) @ 25°C: 1A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| BSP315 |
|
Виробник: Siemens
Description: MOSFET P-CH 50V 1A SOT223
Drain to Source Voltage (Vdss): 50 V
Supplier Device Package: SOT-223
Power Dissipation (Max): 1.8W
Current - Continuous Drain (Id) @ 25°C: 1A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: MOSFET P-CH 50V 1A SOT223
Drain to Source Voltage (Vdss): 50 V
Supplier Device Package: SOT-223
Power Dissipation (Max): 1.8W
Current - Continuous Drain (Id) @ 25°C: 1A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.