Технічний опис BSP315 INF
Description: MOSFET P-CH 50V 1A SOT223, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A, Power Dissipation (Max): 1.8W, Supplier Device Package: SOT-223, Drain to Source Voltage (Vdss): 50 V.
Інші пропозиції BSP315
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BSP315 | Siemens |
 Description: MOSFET P-CH 50V 1A SOT223Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A Power Dissipation (Max): 1.8W Supplier Device Package: SOT-223 Drain to Source Voltage (Vdss): 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BSP315 |
|
Виробник: Siemens
Description: MOSFET P-CH 50V 1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A
Power Dissipation (Max): 1.8W
Supplier Device Package: SOT-223
Drain to Source Voltage (Vdss): 50 V
Description: MOSFET P-CH 50V 1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A
Power Dissipation (Max): 1.8W
Supplier Device Package: SOT-223
Drain to Source Voltage (Vdss): 50 V
товару немає в наявності
В кошику
од. на суму грн.