BSP321PH6327XTSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 5+ | 74.17 грн |
| 10+ | 58.68 грн |
| 100+ | 36.72 грн |
| 500+ | 36.58 грн |
| 2000+ | 34.40 грн |
| 5000+ | 25.16 грн |
| 10000+ | 23.89 грн |
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Технічний опис BSP321PH6327XTSA1 Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 4V @ 380µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V, Current - Continuous Drain (Id) @ 25°C: 980mA (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції BSP321PH6327XTSA1 за ціною від 42.29 грн до 104.67 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSP321PH6327XTSA1 | Infineon Technologies |
 Description: MOSFET P-CH 100V 980MA SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-SOT223-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
на замовлення 371 шт: термін постачання 21-31 дні (днів) |
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| BSP321PH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
на замовлення 371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 104.67 грн |
| 10+ | 63.83 грн |
| 100+ | 42.29 грн |