BSP372NH6327XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1000+ | 26.94 грн |
| 2000+ | 23.68 грн |
| 3000+ | 22.52 грн |
| 5000+ | 19.91 грн |
| 7000+ | 19.19 грн |
| 10000+ | 18.49 грн |
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Технічний опис BSP372NH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 218µA, Supplier Device Package: PG-SOT223-4, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BSP372NH6327XTSA1 за ціною від 14.59 грн до 93.57 грн
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BSP372NH6327XTSA1 | Infineon Technologies |
MOSFETs SMALL SIGNAL N-CH |
на замовлення 4112 шт: термін постачання 21-30 дні (днів) |
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BSP372NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 1.8A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 218µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 65384 шт: термін постачання 21-31 дні (днів) |
|
| BSP372NH6327XTSA1 |
|
Виробник: Infineon Technologies
MOSFETs SMALL SIGNAL N-CH
MOSFETs SMALL SIGNAL N-CH
на замовлення 4112 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.25 грн |
| 10+ | 46.04 грн |
| 100+ | 27.49 грн |
| 500+ | 21.29 грн |
| 1000+ | 18.82 грн |
| 2000+ | 15.01 грн |
| 5000+ | 14.59 грн |
| BSP372NH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Qualification: AEC-Q101
на замовлення 65384 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 93.57 грн |
| 10+ | 56.43 грн |
| 100+ | 37.01 грн |
| 500+ | 26.88 грн |