BSP52T3G onsemi
Виробник: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 7+ | 45.04 грн |
| 12+ | 26.92 грн |
| 100+ | 17.31 грн |
| 500+ | 12.32 грн |
| 1000+ | 11.06 грн |
| 2000+ | 10.00 грн |
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Технічний опис BSP52T3G onsemi
Description: TRANS NPN DARL 80V 1A SOT223, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: SOT-223 (TO-261), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).