BSP61E6327HTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 2129+ | 9.65 грн |
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Технічний опис BSP61E6327HTSA1 Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 1 A, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції BSP61E6327HTSA1
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BSP61E6327HTSA1 | Виробник : Infineon Technologies |
Description: TRANS PNP DARL 60V 1A SOT223-4 Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: PG-SOT223-4 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
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