BSP88E6327 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
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Технічний опис BSP88E6327 Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Drain to Source Voltage (Vdss): 240 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 1.4V @ 108µA, Power Dissipation (Max): 1.7W (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції BSP88E6327
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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BSP88E6327 | Infineon Technologies |
Description: MOSFET N-CH 240V 350MA SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Part Status: Obsolete Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 1.4V @ 108µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
BSP88 E6327 | Infineon Technologies |
MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. |
| BSP88E6327 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 240V 350MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BSP88 E6327 |
|
Виробник: Infineon Technologies
MOSFETs
MOSFETs
товару немає в наявності
В кошику
од. на суму грн.