BSP88H6327XTSA1

Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Qualification: AEC-Q101

Виробник: Infineon
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 BSP88H6327XTSA1 TBSP88h
кількість в упаковці: 50 шт

Виробник: Infineon Technologies
MOSFETs N-Ch 240V 350mA SOT-223-3

Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)