BSR302NL6327HTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SC59-3
Vgs(th) (Max) @ Id: 2V @ 30µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 2025+ | 10.16 грн |
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Технічний опис BSR302NL6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SC59-3, Vgs(th) (Max) @ Id: 2V @ 30µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BSR302NL6327HTSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BSR302NL6327HTSA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 30V 3.7A SOT-23-3 |
на замовлення 2952 шт: термін постачання 21-30 дні (днів) |
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BSR302NL6327HTSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 3.7A SC59 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-SC59-3 Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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BSR302NL6327HTSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Case: SC59 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 36mΩ Power dissipation: 0.5W Drain current: 3.7A Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |