BSR606NH6327XTSA1

BSR606NH6327XTSA1 Infineon Technologies


BSR606N.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.3A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис BSR606NH6327XTSA1 Infineon Technologies

Description: MOSFET N-CH 60V 2.3A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.3A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 15µA, Supplier Device Package: PG-SC59-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V, Qualification: AEC-Q101.

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BSR606NH6327XTSA1 BSR606NH6327XTSA1 Виробник : Infineon Technologies Infineon_BSR606N_DS_v02_03_en-3160732.pdf MOSFET N-Ch 60V 2.3A SOT-23-3
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