Інші пропозиції BSS138DWQ-7 за ціною від 8.85 грн до 47.03 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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BSS138DWQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.2A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BSS138DWQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.2A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20618 шт: термін постачання 21-31 дні (днів) |
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BSS138DWQ-7 | Diodes Incorporated |
MOSFETs BSS Family |
на замовлення 5196 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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BSS138DWQ-7 | DIODES INC. |
Description: DIODES INC. - BSS138DWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 3.5 ohmtariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 50V Dauer-Drainstrom Id, n-Kanal: 200mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 200mW Drain-Source-Spannung Vds, n-Kanal: 50V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 200mW Betriebstemperatur, max.: 150°C |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||
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BSS138DWQ-7 | DIODES INC. |
Description: DIODES INC. - BSS138DWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 3.5 ohmtariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 50V Dauer-Drainstrom Id, n-Kanal: 200mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 200mW Drain-Source-Spannung Vds, n-Kanal: 50V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 200mW Betriebstemperatur, max.: 150°C |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. |
| BSS138DWQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.62 грн |
| 9000+ | 8.85 грн |
| BSS138DWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20618 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.03 грн |
| 11+ | 28.00 грн |
| 25+ | 23.28 грн |
| 50+ | 19.08 грн |
| 100+ | 16.75 грн |
| BSS138DWQ-7 |
![]() |
Виробник: Diodes Incorporated
MOSFETs BSS Family
MOSFETs BSS Family
на замовлення 5196 шт:
термін постачання 21-30 дні (днів)
| BSS138DWQ-7 |
![]() |
Виробник: DIODES INC.
Description: DIODES INC. - BSS138DWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 3.5 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 50V
Dauer-Drainstrom Id, n-Kanal: 200mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 200mW
Drain-Source-Spannung Vds, n-Kanal: 50V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 200mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - BSS138DWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 3.5 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 50V
Dauer-Drainstrom Id, n-Kanal: 200mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 200mW
Drain-Source-Spannung Vds, n-Kanal: 50V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 200mW
Betriebstemperatur, max.: 150°C
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| BSS138DWQ-7 |
![]() |
Виробник: DIODES INC.
Description: DIODES INC. - BSS138DWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 3.5 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 50V
Dauer-Drainstrom Id, n-Kanal: 200mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 200mW
Drain-Source-Spannung Vds, n-Kanal: 50V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 200mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - BSS138DWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 3.5 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 50V
Dauer-Drainstrom Id, n-Kanal: 200mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 200mW
Drain-Source-Spannung Vds, n-Kanal: 50V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 200mW
Betriebstemperatur, max.: 150°C
на замовлення 7 шт:
термін постачання 21-31 дні (днів)





