BSS139 E6906 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BSS139 E6906 Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1V @ 56µA, Supplier Device Package: PG-SOT23, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BSS139 E6906
| Фото | Назва | Виробник | Інформація |
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| BSS139 E6906 | Виробник : Infineon Technologies |
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товару немає в наявності |