BSS169H6906XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис BSS169H6906XTSA1 Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 50µA, Supplier Device Package: PG-SOT23, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції BSS169H6906XTSA1 за ціною від 21.36 грн до 82.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSS169H6906XTSA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
на замовлення 69918 шт: термін постачання 21-31 дні (днів) |
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BSS169H6906XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 170MA SOT23-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Part Status: Not For New Designs Supplier Device Package: PG-SOT23 Vgs(th) (Max) @ Id: 1.8V @ 50µA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 43881 шт: термін постачання 21-31 дні (днів) |
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| BSS169H6906XTSA1 | Infineon |
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на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| BSS169H6906XTSA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R Automotive AEC-Q101
на замовлення 69918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1147+ | 30.84 грн |
| 10000+ | 27.49 грн |
| BSS169H6906XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 170MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 43881 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 82.46 грн |
| 10+ | 49.56 грн |
| 100+ | 32.44 грн |
| 500+ | 23.57 грн |
| 1000+ | 21.36 грн |
| BSS169H6906XTSA1 |
|
Виробник: Infineon
на замовлення 3000 шт:
термін постачання 14-28 дні (днів)