BSS192PE6327 ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - BSS192PE6327 - BSS192 - SMALL SIGNAL N-CHANNEL MOSFET
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
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Технічний опис BSS192PE6327 ROCHESTER ELECTRONICS
Description: MOSFET P-CH 250V 190MA SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-SOT89, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V.
Інші пропозиції BSS192PE6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BSS192PE6327 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 250V 190MA SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-SOT89 Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V |
товару немає в наявності |