BSS192PH6327FTSA1
Код товару: 173677
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Різні комплектуючі > Різні комплектуючі 1
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Інші пропозиції BSS192PH6327FTSA1 за ціною від 9.37 грн до 53.13 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSS192PH6327FTSA1 | Infineon Technologies |
Description: MOSFET P-CH 250V 190MA SOT89Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-SOT89 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BSS192PH6327FTSA1 | Infineon Technologies |
MOSFETs P-Ch -250V -190mA SOT-89-3 |
на замовлення 1078 шт: термін постачання 21-30 дні (днів) |
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BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89 Case: PG-SOT89 Kind of channel: enhancement Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -250V Drain current: -190mA Power dissipation: 1W On-state resistance: 12Ω Gate-source voltage: ±20V |
на замовлення 771 шт: термін постачання 14-30 дні (днів) |
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BSS192PH6327FTSA1 | Infineon Technologies |
Description: MOSFET P-CH 250V 190MA SOT89Qualification: AEC-Q101 Grade: Automotive FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Part Status: Active Supplier Device Package: PG-SOT89 Vgs(th) (Max) @ Id: 2V @ 130µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) |
на замовлення 3717 шт: термін постачання 21-31 дні (днів) |
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| BSS192PH6327FTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 14.72 грн |
| 2000+ | 12.85 грн |
| 3000+ | 12.17 грн |
| BSS192PH6327FTSA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs P-Ch -250V -190mA SOT-89-3
MOSFETs P-Ch -250V -190mA SOT-89-3
на замовлення 1078 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.50 грн |
| 12+ | 28.61 грн |
| 100+ | 18.04 грн |
| 500+ | 14.52 грн |
| 1000+ | 12.76 грн |
| 2000+ | 9.66 грн |
| 5000+ | 9.37 грн |
| BSS192PH6327FTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
On-state resistance: 12Ω
Gate-source voltage: ±20V
на замовлення 771 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 50.25 грн |
| 14+ | 32.24 грн |
| 100+ | 19.17 грн |
| 500+ | 13.40 грн |
| BSS192PH6327FTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 190MA SOT89
Qualification: AEC-Q101
Grade: Automotive
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Active
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Description: MOSFET P-CH 250V 190MA SOT89
Qualification: AEC-Q101
Grade: Automotive
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Active
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
на замовлення 3717 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 53.13 грн |
| 10+ | 31.99 грн |
| 100+ | 20.64 грн |
| 500+ | 14.78 грн |




