BSS205NH6327XTSA1 Infineon
Виробник: Infineon
Trans MOSFET N-CH 20V 2.5A Automotive 3-Pin SOT-23 BSS205NH6327XTSA1; BSS205N; PT2302B; BSS205NH6327XTSA1 TBSS205n
кількість в упаковці: 100 шт
на замовлення 3000 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 200+ | 4.22 грн |
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Технічний опис BSS205NH6327XTSA1 Infineon
Description: MOSFET N-CH 20V 2.5A SOT23-3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PG-SOT23, Vgs(th) (Max) @ Id: 1.2V @ 11µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BSS205NH6327XTSA1 за ціною від 3.33 грн до 31.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSS205NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 2.5A SOT23-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PG-SOT23 Vgs(th) (Max) @ Id: 1.2V @ 11µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BSS205NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23 Mounting: SMD Case: SOT23 On-state resistance: 85mΩ Technology: OptiMOS™ 2 Power dissipation: 0.5W Drain current: 2.5A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 5277 шт: термін постачання 14-30 дні (днів) |
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BSS205NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 2.5A SOT23-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PG-SOT23 Vgs(th) (Max) @ Id: 1.2V @ 11µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 24184 шт: термін постачання 21-31 дні (днів) |
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BSS205NH6327XTSA1 | Infineon Technologies |
MOSFETs N-Ch 20V 2.5A SOT-23-3 |
на замовлення 22929 шт: термін постачання 21-30 дні (днів) |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 2.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 2.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.03 грн |
| 6000+ | 4.31 грн |
| 9000+ | 3.65 грн |
| 15000+ | 3.33 грн |
| BSS205NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 85mΩ
Technology: OptiMOS™ 2
Power dissipation: 0.5W
Drain current: 2.5A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 85mΩ
Technology: OptiMOS™ 2
Power dissipation: 0.5W
Drain current: 2.5A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 5277 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 24.67 грн |
| 22+ | 19.34 грн |
| 26+ | 16.80 грн |
| 50+ | 11.37 грн |
| 100+ | 9.59 грн |
| 500+ | 6.70 грн |
| 1000+ | 5.94 грн |
| 3000+ | 5.01 грн |
| BSS205NH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 2.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 2.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 24184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.37 грн |
| 22+ | 14.35 грн |
| 100+ | 6.24 грн |
| 500+ | 5.66 грн |
| BSS205NH6327XTSA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 20V 2.5A SOT-23-3
MOSFETs N-Ch 20V 2.5A SOT-23-3
на замовлення 22929 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 31.82 грн |
| 17+ | 19.13 грн |
| 100+ | 10.36 грн |
| 500+ | 7.61 грн |
| 1000+ | 6.70 грн |
| 3000+ | 5.15 грн |
| 6000+ | 4.58 грн |