BSS215P H6327 Infineon Technologies

Description: SMALL SIGNAL P-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PG-SOT23-3-5, Vgs(th) (Max) @ Id: 600mV @ 11µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, FET Type: P-Channel.