BSS225H6327FTSA1 Infineon
Виробник: Infineon
N-MOSFET 600V 0.09A 45Ω 1W BSS225H6327FTSA1 BSS225H6327 Infineon TBSS225
кількість в упаковці: 10 шт
на замовлення 997 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 14.96 грн |
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Технічний опис BSS225H6327FTSA1 Infineon
Description: MOSFET N-CH 600V 90MA SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90mA (Ta), Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 94µA, Supplier Device Package: PG-SOT89, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BSS225H6327FTSA1 за ціною від 9.37 грн до 58.68 грн
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BSS225H6327FTSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 90MA SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 94µA Supplier Device Package: PG-SOT89 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BSS225H6327FTSA1 | Infineon Technologies |
MOSFETs N-Ch 600V 90mA SOT-89-3 |
на замовлення 4419 шт: термін постачання 21-30 дні (днів) |
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Mounting: SMD Case: SOT89 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.09A On-state resistance: 45Ω Power dissipation: 1W Gate-source voltage: ±20V Kind of channel: enhancement |
на замовлення 262 шт: термін постачання 14-30 дні (днів) |
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BSS225H6327FTSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 90MA SOT89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 94µA Supplier Device Package: PG-SOT89 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6684 шт: термін постачання 21-31 дні (днів) |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 16.29 грн |
| 2000+ | 14.22 грн |
| 3000+ | 13.48 грн |
| 5000+ | 11.86 грн |
| BSS225H6327FTSA1 |
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Виробник: Infineon Technologies
MOSFETs N-Ch 600V 90mA SOT-89-3
MOSFETs N-Ch 600V 90mA SOT-89-3
на замовлення 4419 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 18+ | 18.32 грн |
| 100+ | 14.10 грн |
| 500+ | 14.03 грн |
| 1000+ | 10.78 грн |
| 2000+ | 9.37 грн |
| BSS225H6327FTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 43.86 грн |
| 25+ | 17.22 грн |
| 100+ | 15.19 грн |
| BSS225H6327FTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6684 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.68 грн |
| 10+ | 35.28 грн |
| 100+ | 22.79 грн |
| 500+ | 16.35 грн |