BSS306NH6327XTSA1 Infineon
Виробник: Infineon
Tranzystor N-Channel MOSFET; 30V; 20V; 93mOhm; 2,3A; 500mW; -55°C ~ 150°C; Odpowiednik: BSS306NH6327HTSA1; BSS306NH6327; RC2304A; MOT3400AB2; YFW3404B; PT3404; LGE3404; BSS306N-VB; BSS306NH6327 Infineon TBSS306n
кількість в упаковці: 100 шт
на замовлення 2413 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 200+ | 4.94 грн |
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Технічний опис BSS306NH6327XTSA1 Infineon
Description: MOSFET N-CH 30V 2.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2V @ 11µA, Supplier Device Package: PG-SOT23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BSS306NH6327XTSA1 за ціною від 4.09 грн до 30.92 грн
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BSS306NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 2.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 92600 шт: термін постачання 21-31 дні (днів) |
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BSS306NH6327XTSA1 | Infineon Technologies |
MOSFETs N-Ch 30V 2.3A SOT-23-3 |
на замовлення 63461 шт: термін постачання 21-30 дні (днів) |
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BSS306NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 2.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 92856 шт: термін постачання 21-31 дні (днів) |
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| BSS306NH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 92600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.67 грн |
| 6000+ | 5.82 грн |
| 9000+ | 5.51 грн |
| 15000+ | 4.84 грн |
| 21000+ | 4.65 грн |
| 30000+ | 4.46 грн |
| BSS306NH6327XTSA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 30V 2.3A SOT-23-3
MOSFETs N-Ch 30V 2.3A SOT-23-3
на замовлення 63461 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 28+ | 11.75 грн |
| 100+ | 7.40 грн |
| 500+ | 6.91 грн |
| 1000+ | 6.27 грн |
| 3000+ | 4.58 грн |
| 6000+ | 4.09 грн |
| BSS306NH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V
Qualification: AEC-Q101
на замовлення 92856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 17+ | 18.17 грн |
| 100+ | 11.48 грн |
| 500+ | 8.03 грн |
| 1000+ | 7.15 грн |