BSS606NH6327XTSA1 Infineon
Виробник: Infineon
N-MOSFET 60V 3.2A 60mΩ 1W BSS606NH6327XTSA1 BSS606NH6327 Infineon TBSS606n
кількість в упаковці: 100 шт
на замовлення 990 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 11.88 грн |
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Технічний опис BSS606NH6327XTSA1 Infineon
Description: MOSFET N-CH 60V 3.2A SOT89, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-SOT89, Vgs(th) (Max) @ Id: 2.3V @ 15µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Інші пропозиції BSS606NH6327XTSA1 за ціною від 8.88 грн до 52.08 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSS606NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 3.2A SOT89 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-SOT89 Vgs(th) (Max) @ Id: 2.3V @ 15µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BSS606NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 3.2A SOT89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 15µA Supplier Device Package: PG-SOT89 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 18550 шт: термін постачання 21-31 дні (днів) |
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BSS606NH6327XTSA1 | Infineon Technologies |
MOSFETs N-Ch 60V 3.2A SOT-89-3 |
на замовлення 10338 шт: термін постачання 21-30 дні (днів) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Kind of channel: enhancement Mounting: SMD Case: PG-SOT89 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Drain-source voltage: 60V Drain current: 3.2A On-state resistance: 90mΩ Power dissipation: 1W Gate-source voltage: ±20V Polarisation: unipolar |
на замовлення 637 шт: термін постачання 14-30 дні (днів) |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 3.2A SOT89
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 3.2A SOT89
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 13.86 грн |
| 2000+ | 10.96 грн |
| 3000+ | 10.85 грн |
| 5000+ | 10.06 грн |
| 7000+ | 9.66 грн |
| 10000+ | 9.27 грн |
| BSS606NH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 3.2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3.2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
на замовлення 18550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.20 грн |
| 11+ | 29.70 грн |
| 100+ | 19.92 грн |
| 500+ | 14.36 грн |
| BSS606NH6327XTSA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 60V 3.2A SOT-89-3
MOSFETs N-Ch 60V 3.2A SOT-89-3
на замовлення 10338 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.97 грн |
| 11+ | 30.88 грн |
| 100+ | 17.97 грн |
| 500+ | 13.81 грн |
| 1000+ | 11.98 грн |
| 2000+ | 9.44 грн |
| 5000+ | 8.88 грн |
| BSS606NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 90mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 90mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 637 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 52.08 грн |
| 16+ | 27.15 грн |
| 50+ | 19.77 грн |
| 100+ | 17.48 грн |
| 500+ | 13.40 грн |