BSS670T116 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 31.17 грн |
| 17+ | 19.77 грн |
| 100+ | 10.91 грн |
| 500+ | 8.91 грн |
| 1000+ | 7.52 грн |
| 3000+ | 6.77 грн |
| 6000+ | 6.14 грн |
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Технічний опис BSS670T116 ROHM Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG, Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: SST3, Vgs(th) (Max) @ Id: 2V @ 10µA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BSS670T116 за ціною від 13.60 грн до 36.50 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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BSS670T116 | Rohm Semiconductor |
 Description: NCH 60V 650MA, SOT-23, SMALL SIGInput Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SST3 Vgs(th) (Max) @ Id: 2V @ 10µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 287 шт: термін постачання 21-31 дні (днів) |
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| BSS670T116 |
|
Виробник: Rohm Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.50 грн |
| 14+ | 21.46 грн |
| 100+ | 13.60 грн |