BSS816NW L6327 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 20V 1.4A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 3.7µA
Supplier Device Package: PG-SOT323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BSS816NW L6327 Infineon Technologies
Description: MOSFET N-CH 20V 1.4A SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 750mV @ 3.7µA, Supplier Device Package: PG-SOT323, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BSS816NW L6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BSS816NW L6327 | Виробник : Infineon Technologies |
MOSFETs N-Ch 20V |
товару немає в наявності |