Технічний опис BSS84-TP Micro Commercial Components
Description: MICRO COMMERCIAL COMPONENTS (MCC) - BSS84-TP - Leistungs-MOSFET, p-Kanal, 60 V, 160 mA, 7.8 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 160mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2V, Verlustleistung: 400mW, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 7.8ohm.
Інші пропозиції BSS84-TP за ціною від 2.05 грн до 15.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BSS84-TP | MCC (Micro Commercial Components) |
 Description: MOSFET P-CH 50V 130MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Tj) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V Power Dissipation (Max): 225mW Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BSS84-TP | MICRO COMMERCIAL COMPONENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; Idm: -0.52A; 0.225W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -0.52A |
на замовлення 30129 шт: термін постачання 14-30 дні (днів) |
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BSS84-TP | MCC (Micro Commercial Components) |
Description: MOSFET P-CH 50V 130MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Tj) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V Power Dissipation (Max): 225mW Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
на замовлення 16823 шт: термін постачання 21-31 дні (днів) |
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BSS84-TP | MICRO COMMERCIAL COMPONENTS (MCC) |
Description: MICRO COMMERCIAL COMPONENTS (MCC) - BSS84-TP - Leistungs-MOSFET, p-Kanal, 60 V, 160 mA, 7.8 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 160mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 400mW SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 7.8ohm |
на замовлення 8600 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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BSS84-TP | MICRO COMMERCIAL COMPONENTS (MCC) |
Description: MICRO COMMERCIAL COMPONENTS (MCC) - BSS84-TP - Leistungs-MOSFET, p-Kanal, 60 V, 160 mA, 7.8 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 160mA hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 400mW SVHC: No SVHC (04-Feb-2026) Anzahl der Pins: 3Pin(s) productTraceability: No usEccn: EAR99 Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 7.8ohm |
на замовлення 8600 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| BSS84-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 50V 130MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET P-CH 50V 130MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.97 грн |
| 6000+ | 2.56 грн |
| 9000+ | 2.40 грн |
| 15000+ | 2.09 грн |
| BSS84-TP |
|
Виробник: MICRO COMMERCIAL COMPONENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; Idm: -0.52A; 0.225W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -0.52A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; Idm: -0.52A; 0.225W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -0.52A
на замовлення 30129 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.33 грн |
| 35+ | 12.02 грн |
| 100+ | 7.64 грн |
| 500+ | 4.72 грн |
| 1000+ | 3.86 грн |
| 3000+ | 2.90 грн |
| 6000+ | 2.51 грн |
| 9000+ | 2.32 грн |
| 21000+ | 2.05 грн |
| BSS84-TP |
|
Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 50V 130MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET P-CH 50V 130MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
на замовлення 16823 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.46 грн |
| 35+ | 8.64 грн |
| 100+ | 5.38 грн |
| 500+ | 3.69 грн |
| 1000+ | 3.25 грн |
| BSS84-TP |
|
Виробник: MICRO COMMERCIAL COMPONENTS (MCC)
Description: MICRO COMMERCIAL COMPONENTS (MCC) - BSS84-TP - Leistungs-MOSFET, p-Kanal, 60 V, 160 mA, 7.8 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 160mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 400mW
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 7.8ohm
Description: MICRO COMMERCIAL COMPONENTS (MCC) - BSS84-TP - Leistungs-MOSFET, p-Kanal, 60 V, 160 mA, 7.8 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 160mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 400mW
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 7.8ohm
на замовлення 8600 шт:
термін постачання 21-31 дні (днів)
| BSS84-TP |
|
Виробник: MICRO COMMERCIAL COMPONENTS (MCC)
Description: MICRO COMMERCIAL COMPONENTS (MCC) - BSS84-TP - Leistungs-MOSFET, p-Kanal, 60 V, 160 mA, 7.8 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 160mA
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 400mW
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 3Pin(s)
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 7.8ohm
Description: MICRO COMMERCIAL COMPONENTS (MCC) - BSS84-TP - Leistungs-MOSFET, p-Kanal, 60 V, 160 mA, 7.8 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 160mA
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 400mW
SVHC: No SVHC (04-Feb-2026)
Anzahl der Pins: 3Pin(s)
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 7.8ohm
на замовлення 8600 шт:
термін постачання 21-31 дні (днів)