Технічний опис BSS87H6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 240V 260MA SOT89-4, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 108µA, Supplier Device Package: PG-SOT89-4-2, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BSS87H6327XTSA1
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BSS87H6327XTSA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 240V 0.26A Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R |
товару немає в наявності |
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BSS87H6327XTSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 240V 260MA SOT89-4 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 108µA Supplier Device Package: PG-SOT89-4-2 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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BSS87H6327XTSA1 | Виробник : Infineon Technologies |
MOSFET SMALL SIGNAL+P-CH |
товару немає в наявності |