BST82,235 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 190MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис BST82,235 Nexperia USA Inc.
Description: MOSFET N-CH 100V 190MA TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Not For New Designs, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 830mW (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BST82,235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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BST82,235 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 190MA TO236AB Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Not For New Designs Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BST82,235 | Nexperia |
MOSFETs BST82/SOT23/TO-236AB |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. |
| BST82,235 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 190MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 190MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.