BST91T1P4K01-VC Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: HSDIP20, 750V, 90A, 3-PHASE-BRID
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
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Технічний опис BST91T1P4K01-VC Rohm Semiconductor
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID, Packaging: Box, Package / Case: 20-PowerDIP Module (1.508", 38.30mm), Mounting Type: Through Hole, Configuration: 6 N-Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C, Technology: Silicon Carbide (SiC), Power - Max: 385W (Tc), Drain to Source Voltage (Vdss): 750V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V, Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V, Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V, Vgs(th) (Max) @ Id: 4.8V @ 30.8mA, Supplier Device Package: 20-HSDIP.