BST91T1P4K01-VC ROHM
Виробник: ROHM
Description: ROHM - BST91T1P4K01-VC - Siliziumkarbid-MOSFET, SixPack, Sechsfach n-Kanal, 90 A, 750 V, 0.019 ohm, HSDIP
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: SixPack
euEccn: NLR
Verlustleistung: 385W
Bauform - Transistor: HSDIP
Anzahl der Pins: 20Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: Sechsfach n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.019ohm
SVHC: No SVHC (25-Jun-2025)
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Технічний опис BST91T1P4K01-VC ROHM
Description: ROHM - BST91T1P4K01-VC - Siliziumkarbid-MOSFET, SixPack, Sechsfach n-Kanal, 90 A, 750 V, 0.019 ohm, HSDIP, tariffCode: 85412900, Drain-Source-Spannung Vds: 750V, rohsCompliant: YES, Dauer-Drainstrom Id: 90A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4.8V, MOSFET-Modul-Konfiguration: SixPack, euEccn: NLR, Verlustleistung: 385W, Bauform - Transistor: HSDIP, Anzahl der Pins: 20Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: Sechsfach n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.019ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції BST91T1P4K01-VC
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BST91T1P4K01-VC | Виробник : Rohm Semiconductor |
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID Packaging: Box Package / Case: 20-PowerDIP Module (1.508", 38.30mm) Mounting Type: Through Hole Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 385W (Tc) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: 20-HSDIP |
товару немає в наявності |