BSV52LT1G onsemi
Виробник: onsemi
Description: TRANS NPN 12V 0.1A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.41 грн |
| 25+ | 12.52 грн |
| 100+ | 7.84 грн |
| 500+ | 5.42 грн |
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Технічний опис BSV52LT1G onsemi
Description: TRANS NPN 12V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Frequency - Transition: 400MHz, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 225 mW.
