| Кількість | Ціна |
|---|---|
| 3+ | 132.39 грн |
| 10+ | 104.56 грн |
| 100+ | 85.28 грн |
| 250+ | 78.94 грн |
| 500+ | 74.01 грн |
| 1000+ | 67.24 грн |
| 5000+ | 66.61 грн |
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Технічний опис BSZ010NE2LS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 25V 32A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-34, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V.
Інші пропозиції BSZ010NE2LS5ATMA1 за ціною від 81.09 грн до 187.92 грн
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BSZ010NE2LS5ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 25V 32A/40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V |
на замовлення 3638 шт: термін постачання 21-31 дні (днів) |
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| BSZ010NE2LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
на замовлення 3638 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 187.92 грн |
| 10+ | 136.75 грн |
| 25+ | 123.42 грн |
| 100+ | 100.48 грн |
| 250+ | 92.32 грн |
| 500+ | 87.05 грн |
| 1000+ | 81.09 грн |