BSZ021N04LS6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Відгуки про товар
Написати відгук
Технічний опис BSZ021N04LS6ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 25A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PG-TSDSON-8-34, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V.
Інші пропозиції BSZ021N04LS6ATMA1 за ціною від 37.85 грн до 94.56 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BSZ021N04LS6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 25A/40A TSDSON Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8-34 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 12035 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
BSZ021N04LS6ATMA1 | Infineon Technologies |
MOSFETs TRENCH <= 40V |
на замовлення 10337 шт: термін постачання 21-30 дні (днів) |
|
| BSZ021N04LS6ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 12035 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 91.98 грн |
| 10+ | 76.05 грн |
| 25+ | 71.74 грн |
| 100+ | 61.78 грн |
| 250+ | 58.44 грн |
| 500+ | 56.07 грн |
| 1000+ | 52.96 грн |
| BSZ021N04LS6ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
на замовлення 10337 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 94.56 грн |
| 10+ | 75.95 грн |
| 100+ | 57.23 грн |
| 500+ | 52.37 грн |
| 1000+ | 43.77 грн |
| 2500+ | 40.39 грн |
| 5000+ | 37.85 грн |