BSZ058N03LSGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 15A/40A 8TSDSON, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TSDSON-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).