BSZ060NE2LSATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
| Кількість | Ціна |
|---|---|
| 5000+ | 23.29 грн |
| 10000+ | 20.84 грн |
| 15000+ | 20.02 грн |
| 25000+ | 17.94 грн |
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Технічний опис BSZ060NE2LSATMA1 Infineon Technologies
Description: MOSFET N-CH 25V 12A/44A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V.
Інші пропозиції BSZ060NE2LSATMA1 за ціною від 11.35 грн до 96.74 грн
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BSZ060NE2LSATMA1 | Infineon Technologies |
MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS |
на замовлення 50771 шт: термін постачання 21-30 дні (днів) |
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BSZ060NE2LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 12A/44A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V |
на замовлення 29786 шт: термін постачання 21-31 дні (днів) |
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| BSZ060NE2LSATMA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS
MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS
на замовлення 50771 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.42 грн |
| 15+ | 22.45 грн |
| 100+ | 16.21 грн |
| 500+ | 13.39 грн |
| 1000+ | 13.11 грн |
| 2500+ | 12.26 грн |
| 5000+ | 11.35 грн |
| BSZ060NE2LSATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
на замовлення 29786 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 96.74 грн |
| 10+ | 58.03 грн |
| 100+ | 38.09 грн |
| 500+ | 27.70 грн |
| 1000+ | 25.10 грн |
| 2000+ | 22.92 грн |