BSZ0901NSIATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
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Технічний опис BSZ0901NSIATMA1 Infineon Technologies
Description: INFINEON - BSZ0901NSIATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 1800 µohm, TSDSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 40A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: 69W, Bauform - Transistor: TSDSON, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1800µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції BSZ0901NSIATMA1 за ціною від 32.78 грн до 138.15 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSZ0901NSIATMA1 | INFINEON |
Description: INFINEON - BSZ0901NSIATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 1800 µohm, TSDSON, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1800µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 1295 шт: термін постачання 21-31 дні (днів) |
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BSZ0901NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 25A/40A TSDSONInput Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8-FL Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 13206 шт: термін постачання 21-31 дні (днів) |
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BSZ0901NSIATMA1 | INFINEON |
Description: INFINEON - BSZ0901NSIATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 1800 µohm, TSDSON, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1800µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 1295 шт: термін постачання 21-31 дні (днів) |
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| BSZ0901NSIATMA1 |
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Виробник: INFINEON
Description: INFINEON - BSZ0901NSIATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 1800 µohm, TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TSDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - BSZ0901NSIATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 1800 µohm, TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TSDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 1295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 58.55 грн |
| 500+ | 43.68 грн |
| 1000+ | 34.68 грн |
| BSZ0901NSIATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 13206 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.73 грн |
| 10+ | 73.00 грн |
| 100+ | 48.95 грн |
| 500+ | 36.24 грн |
| 1000+ | 33.12 грн |
| 2000+ | 32.78 грн |
| BSZ0901NSIATMA1 |
![]() |
Виробник: INFINEON
Description: INFINEON - BSZ0901NSIATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 1800 µohm, TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TSDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - BSZ0901NSIATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 1800 µohm, TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TSDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 1295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 138.15 грн |
| 10+ | 87.99 грн |
| 100+ | 58.55 грн |
| 500+ | 43.68 грн |
| 1000+ | 34.68 грн |



