BSZ160N10NS3GATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
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Технічний опис BSZ160N10NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 8A/40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 12µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V.
Інші пропозиції BSZ160N10NS3GATMA1 за ціною від 39.61 грн до 149.66 грн
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BSZ160N10NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 8A/40A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 12µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V |
на замовлення 5038 шт: термін постачання 21-31 дні (днів) |
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BSZ160N10NS3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 100V 40A TSDSON-8 OptiMOS 3 |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
|
| BSZ160N10NS3GATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Description: MOSFET N-CH 100V 8A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
на замовлення 5038 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.93 грн |
| 10+ | 87.43 грн |
| 100+ | 59.18 грн |
| 500+ | 44.18 грн |
| 1000+ | 41.84 грн |
| BSZ160N10NS3GATMA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 100V 40A TSDSON-8 OptiMOS 3
MOSFETs N-Ch 100V 40A TSDSON-8 OptiMOS 3
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 149.66 грн |
| 10+ | 92.40 грн |
| 100+ | 54.41 грн |
| 500+ | 44.76 грн |
| 1000+ | 41.02 грн |
| 5000+ | 39.61 грн |