BSZ16DN25NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 250V 10.9A 8TSDSON, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TSDSON-8, Vgs(th) (Max) @ Id: 4V @ 32µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).