BSZ180P03NS3EGATMA1 Infineon Technologies

Description: MOSFET P-CH 30V 9A/39.5A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.5A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 3.1V @ 48µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V.