BSZ215CHXTMA1 Infineon Technologies

Description: MOSFET N/P-CH 20V 5.1A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A, Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V, Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.4V @ 110µA, Supplier Device Package: PG-TSDSON-8, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.