BSZ340N08NS3GATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 6A/23A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V
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Технічний опис BSZ340N08NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 6A/23A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V, Power Dissipation (Max): 2.1W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 12µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V.
Інші пропозиції BSZ340N08NS3GATMA1 за ціною від 16.07 грн до 85.64 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSZ340N08NS3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 80V 23A TSDSON-8 OptiMOS 3 |
на замовлення 6490 шт: термін постачання 21-30 дні (днів) |
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BSZ340N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 6A/23A 8TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V Power Dissipation (Max): 2.1W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 12µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V |
на замовлення 7461 шт: термін постачання 21-31 дні (днів) |
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| BSZ340N08NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs N-Ch 80V 23A TSDSON-8 OptiMOS 3
MOSFETs N-Ch 80V 23A TSDSON-8 OptiMOS 3
на замовлення 6490 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.62 грн |
| 12+ | 28.69 грн |
| 100+ | 20.65 грн |
| 500+ | 19.66 грн |
| 1000+ | 18.82 грн |
| 2500+ | 18.75 грн |
| 5000+ | 16.07 грн |
| BSZ340N08NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 6A/23A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V
Description: MOSFET N-CH 80V 6A/23A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V
на замовлення 7461 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 85.64 грн |
| 10+ | 51.69 грн |
| 100+ | 34.02 грн |
| 500+ | 24.78 грн |
| 1000+ | 22.48 грн |
| 2000+ | 20.55 грн |



