BSZ900N15NS3GATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
| Кількість | Ціна |
|---|---|
| 5000+ | 40.52 грн |
| 10000+ | 36.59 грн |
| 15000+ | 35.35 грн |
Відгуки про товар
Написати відгук
Технічний опис BSZ900N15NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 13A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V.
Інші пропозиції BSZ900N15NS3GATMA1 за ціною від 32.56 грн до 156.21 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSZ900N15NS3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 150V 13A TSDSON-8 OptiMOS 3 |
на замовлення 16356 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
BSZ900N15NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 13A 8TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V |
на замовлення 23706 шт: термін постачання 21-31 дні (днів) |
|
| BSZ900N15NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs N-Ch 150V 13A TSDSON-8 OptiMOS 3
MOSFETs N-Ch 150V 13A TSDSON-8 OptiMOS 3
на замовлення 16356 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 93.74 грн |
| 10+ | 64.11 грн |
| 100+ | 43.14 грн |
| 500+ | 37.00 грн |
| 1000+ | 33.69 грн |
| 5000+ | 32.84 грн |
| 25000+ | 32.56 грн |
| BSZ900N15NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
на замовлення 23706 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 156.21 грн |
| 10+ | 95.67 грн |
| 100+ | 64.34 грн |
| 500+ | 47.77 грн |
| 1000+ | 43.72 грн |
| 2000+ | 40.30 грн |



