BTS115ANKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 56+ | 360.15 грн |
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Технічний опис BTS115ANKSA1 Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V.
Інші пропозиції BTS115ANKSA1
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BTS115ANKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 50V 15.5A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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