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BTS121AE3045ANTMA1 Infineon Technologies

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) TO-220AB SMD T/R

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Технічний опис BTS121AE3045ANTMA1 Infineon Technologies

Description: MOSFET N CH 100V 22A TO-220AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: PG-TO220-3-5, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.

Інші пропозиції BTS121AE3045ANTMA1

Назва	Виробник	Інформація	Доступність	Ціна
BTS121AE3045ANTMA1	Виробник : Infineon Technologies	Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) TO-220AB SMD T/R	товару немає в наявності	В кошику од. на суму грн.
BTS121AE3045ANTMA1	Виробник : Infineon Technologies	Description: MOSFET N CH 100V 22A TO-220AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PG-TO220-3-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
BTS121AE3045ANTMA1	Виробник : Infineon Technologies	Description: MOSFET N CH 100V 22A TO-220AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PG-TO220-3-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.