BTS121ANKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 22A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 68+ | 311.17 грн |
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Технічний опис BTS121ANKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 22A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 95W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції BTS121ANKSA1
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BTS121ANKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 22A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Obsolete Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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