BTS247Z E3062A Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 55V 33A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
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Технічний опис BTS247Z E3062A Infineon Technologies
Description: MOSFET N-CH 55V 33A TO263-5, Packaging: Tape & Reel (TR), Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V, FET Feature: Temperature Sensing Diode, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 2V @ 90µA, Supplier Device Package: PG-TO263-5-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V.
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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BTS247Z E3062A | Виробник : Infineon Technologies |
MOSFETs N-Ch 55V 44A D2PAK-4 |
товару немає в наявності |