BTS282ZE3180AATMA2 Infineon Technologies

Description: MOSFET N-CH 49V 80A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V, FET Feature: Temperature Sensing Diode, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 240µA, Supplier Device Package: PG-TO263-7-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 49 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.