BTS282ZE3230 ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - BTS282ZE3230 - BTS282 TEMPFET, AUTOMOTIVE LOW-SIDE TEM
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
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Технічний опис BTS282ZE3230 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 49V 80A TO220-7, Packaging: Tube, Package / Case: TO-220-7, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V, FET Feature: Temperature Sensing Diode, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 240µA, Supplier Device Package: P-TO220-7-230, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 49 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BTS282ZE3230
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BTS282ZE3230 | Виробник : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-7 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 240µA Supplier Device Package: PG-TO220-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 49 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
товару немає в наявності |
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BTS282Z E3230 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 49V 80A TO220-7 Packaging: Tube Package / Case: TO-220-7 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 240µA Supplier Device Package: P-TO220-7-230 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 49 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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BTS282Z E3230 | Виробник : Infineon Technologies |
MOSFET N-Ch 49V 80A TO220-7 |
товару немає в наявності |