BTS3050EJ INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIESCategory: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
кількість в упаковці: 1 шт
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Технічний опис BTS3050EJ INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits, Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP, Type of integrated circuit: power switch, Kind of integrated circuit: low-side, Output current: 4A, Number of channels: 1, Kind of output: N-Channel, Mounting: SMD, Case: SO8-EP, On-state resistance: 0.1Ω, Technology: HITFET®, Operating temperature: -40...150°C, Output voltage: 40V, Turn-on time: 115µs, Turn-off time: 210µs, кількість в упаковці: 1 шт.
Інші пропозиції BTS3050EJ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BTS3050EJ | Виробник : Infineon / IR | Infineon HITFET |
товар відсутній |
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BTS3050EJ | Виробник : INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.1Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
товар відсутній |